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Transistoren
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
|---|---|---|---|---|---|---|
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IRFS7430TRLPBF |
MOSFET N-CH 40V 409A D2PAK
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Infineon Technologies
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STD25NF20 |
MOSFET N-CH 200V 18A DPAK
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STMikroelektronik
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IRFR15N20DTRPBF |
MOSFET N-CH 200V 17A DPAK
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Infineon Technologies
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IPB031N08N5ATMA1 |
MOSFET N-CH 80V TO263-3
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Infineon Technologies
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BSS131H6327XTSA1 |
MOSFET N-CH 240V 0,11A SOT23
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Infineon Technologies
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IRFR4620TRLPBF |
MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon Technologies
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IRFH7085TRPBF |
MOSFET N-CH 60V 23A 6-PQFN
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Infineon Technologies
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STD2NK90ZT4 |
MOSFET N-CH 900V 2.1A DPAK
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STMikroelektronik
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IRFS7530TRL7PP |
MOSFET N CH 60V 240A D2PAK
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Infineon Technologies
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AUIRLR120NTRL |
MOSFET N-CH 100V 10A DPAK
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Infineon Technologies
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BSC0702LS |
MOSFET N-CH 8TDSON
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Infineon Technologies
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AUIRFR6215TRL |
MOSFET P-CH 150V 13A DPAK
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Infineon Technologies
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SI7390DP-T1-E3 |
MOSFET 30V 15A 1,8W
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Vishay Halbleiter
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FDMA530PZ |
MOSFET -30V P-Ch PowerTrench MOSFET
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Fairchild Halbleiter
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IPB35N10S3L-26 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
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Infineon Technologies
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BSZ034N04LS |
MOSFETEN Unterschiedliche MOSFETEN
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Infineon Technologies
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IPD90P04P4L-04 |
MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2
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Infineon Technologies
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FQPF13N50C |
MOSFET 500V N-Ch Q-FET Vorlauf C-Serie
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Fairchild Halbleiter
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FQA38N30 |
MOSFET 300 V N-Kanal QFET
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Fairchild Halbleiter
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FQPF12N60C |
MOSFET 600V N-Ch Q-FET Vorlauf C-Serie
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Einheitlich
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SPA11N80C3 |
MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
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Infineon Technologies
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FDB2532 |
MOSFET 150V N-Kanal QFET-Graben
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Fairchild Halbleiter
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SPP17N80C3 |
MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
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Infineon Technologies
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IXFK40N90P |
MOSFET PolarHV HiPerFETs 500V-1,2Kv Rot Rds
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IXYS
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DMP2047UCB4-7 |
MOSFET P-Ch ENH Modus FET -20V -6
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Dioden eingebunden
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Die in Absatz 1 genannten Anforderungen gelten nicht. |
MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A
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IXYS
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IXFP16N50P |
MOSFET 500V 16A
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IXYS
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IXTQ69N30P |
MOSFET 69 Ampere 300V 0,049 Rds
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IXYS
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PMZ320UPEYL |
MOSFET 30V P-Kanal-Grench-MOSFET
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Nexperia
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IPB100N04S4-H2 |
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
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Infineon Technologies
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IXFK64N50P |
MOSFET 500V 64A
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IXYS
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IPP80N08S2L-07 |
MOSFET N-Ch 75V 80A TO220-3 OptiMOS
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Infineon Technologies
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IPD85P04P4-07 |
MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
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Infineon Technologies
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SI9407BDY-T1-E3 |
MOSFET 60V 4,7A 5,0W 120mAh @ 10V
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Vishay Halbleiter
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DMG4435SSS-13 |
MOSFET MOSFET,P-Kanal
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Dioden eingebunden
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IPLU300N04S4-R8 |
MOSFET N-Kanal 30/40V
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Infineon Technologies
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FQB8P10TM |
MOSFET 100V P-Kanal QFET
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Fairchild Halbleiter
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FDG6301N |
MOSFET SC70-6 N-CH 25V
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Einheitlich
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DMG1013UW-7 |
MOSFET P-Ch -20V VDSS Erweiterter Mosfet
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Dioden eingebunden
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IPP60R125CP |
MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP
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Infineon Technologies
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IPW65R110CFDA |
MOSFET N-Ch 650V 31.2A TO247-3
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Infineon Technologies
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FDD7N60NZTM |
MOSFET N-Kanal 600V 5,5A
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Fairchild Halbleiter
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FDS6676AS |
MOSFET 30 V NCH POWER TRENCH MOSFET
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Fairchild Halbleiter
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FDS6982AS |
MOSFET SO-8 N-CH 1&2 30 V
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Einheitlich
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Die in Absatz 1 genannten Bedingungen gelten nicht für die in Absatz 1 genannten Erzeugnisse. |
MOSFET 10a 100V 0,165 Ohm 1Ch HS-Logiktor
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Fairchild Halbleiter
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RFD14N05LSM |
MOSFET TO-252AA N-Ch Leistung
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Fairchild Halbleiter
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SIA931DJ-T1-GE3 |
MOSFET -30V 65mOhm@-10V -4,5A P-CH
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Vishay Halbleiter
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SIS892DN-T1-GE3 |
MOSFET 100V 30A 43W 29 Mohms @ 10V
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Vishay Halbleiter
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Die in Absatz 1 genannten Anforderungen gelten nicht. |
MOSFET-GrenzeP-Leistungs-MOSFETs
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IXYS
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IPG20N06S4L-26 |
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
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Infineon Technologies
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