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Gedächtnis
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
|---|---|---|---|---|---|---|
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N25Q128A11ESE40G |
IC FLASH 128M SPI 108MHZ 8SO
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Mikrontechnologie
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N25Q256A13EF840E |
IC FLASH 256M SPI 108MHZ 8VDFPN
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Mikrontechnologie
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MT41J256M8HX-187E:D |
IC DRAM 2G PARALLEL 78FBGA
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Mikrontechnologie
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MT29F4G16ABADAWP-IT: D |
IC FLASH 4G PARALLEL 48TSOP I
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Mikrontechnologie
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MTA9ASF1G72PZ-2G9E1 |
IC DRAM 72G PARALLEL 1467 MHz
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Mikrontechnologie
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MT46V16M16P-5B:M |
IC DRAM 256M PARALLEL 66TSOP
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Mikrontechnologie
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MTFC16GAPALBH-AIT |
IC FLASH 128G MMC
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Mikrontechnologie
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Die in Anhang I der Verordnung (EG) Nr. 1372/2008 aufgeführten Daten werden in Anhang II der Verordnung (EG) Nr. 1372/2008 übermittelt. |
IC FLASH 256G MMC
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Mikrontechnologie
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W971GG6KB25I |
IC DRAM 1G PARALLEL 84WBGA
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Winbond Elektronik
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MTFC8GAMALBH-AAT |
IC FLASH 64G MMC
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Mikrontechnologie
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MT47H128M8CF-3: H |
IC DRAM 1G PARALLEL 60FBGA
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Mikrontechnologie
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W632GG6KB-15 |
IC DRAM 2G PARALLEL 96WBGA
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Winbond Elektronik
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W25Q32FVSSIG |
IC FLASH 32M SPI 104MHZ 8SOIC
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Winbond Elektronik
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W25Q256FVEIG |
IC FLASH 256M SPI 104MHZ 8WSON
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Winbond Elektronik
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W25Q16DVSSIG |
IC FLASH 16M SPI 104MHZ 8SOIC
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Winbond Elektronik
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MT48LC4M16A2P-7E: G |
IC DRAM 64M PARALLEL 54TSOP
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Mikrontechnologie
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MT2F8G08ABABAWP-ITX:B |
IC FLASH 8G PARALLEL 48TSOP I
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Mikrontechnologie
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N25Q064A13ESF40F |
IC FLASH 64M SPI 108MHZ 16SO W
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Mikrontechnologie
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MT29F4G01ABAFDWB-IT: F |
IC FLASH 4G SPI UPDFN
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Mikrontechnologie
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USE-Funktionär |
IC FLASH 128G PARALLEL 48TSOP I
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Mikrontechnologie
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MT29F1G08ABADAWP: D |
IC FLASH 1G PARALLEL 48TSOP I
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Mikrontechnologie
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MT29F1G08ABBDAHC: |
IC FLASH 1G PARALLEL 63VFBGA
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Mikrontechnologie
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MT2F2G01AAAEDH4-IT:E |
IC FLASH 2G SPI 63VFBGA
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Mikrontechnologie
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Ich bin nicht derjenige. |
IC FLASH 4G PARALLEL 63VFBGA
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Mikrontechnologie
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Ich bin nicht derjenige, der das sagt. |
IC FLASH 8G PARALLEL 63VFBGA
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Mikrontechnologie
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MTFC16GAPALNA-AIT |
EMMC 128G MMC5.1 J56X AT
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Mikrontechnologie
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MTFC64GAPALNA-AIT |
EMMC 512G MMC5.1 J58X AT
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Mikrontechnologie
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USE Gefahrenabweichung |
IC DRAM 576M PARALLEL 144UBGA
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Mikrontechnologie
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W25Q128BVEIG |
IC FLASH 128M SPI 104MHZ 8WSON
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Winbond Elektronik
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W29GL064CB7S |
IC FLASH 64M PARALLEL 48TSOP
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Winbond Elektronik
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W972GG6JB-3 |
IC DRAM 2G PARALLEL 84WBGA
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Winbond Elektronik
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W25Q128FVFIG |
IC FLASH 128M SPI 104MHZ 16SOIC
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Winbond Elektronik
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JS28F128J3F75A |
IC FLASH 128M PARALLEL 56TSOP
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Mikrontechnologie
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N25Q512A13G1240E |
IC FLASH 512M SPI 24TPBGA
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Mikrontechnologie
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N25Q128A13EF840E |
IC FLASH 128M SPI 108MHZ 8VDFPN
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Mikrontechnologie
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N25Q256A13ESF40G |
IC FLASH 256M SPI 108MHZ 16SOP2
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Mikrontechnologie
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MT41J128M16JT-125: K |
IC DRAM 2G PARALLEL 96FBGA
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Mikrontechnologie
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W9412G6JH-4 |
IC DRAM 128M PARALLEL 66TSOP II
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Winbond Elektronik
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USE Gefahrenabweichung |
IC FLASH 512M PARALLEL 64LBGA
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Mikrontechnologie
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MT25QL512ABB8E12-0SIT |
IC FLASH 512M SPI 24TPBGA
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Mikrontechnologie
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MT29F1G08ABBEAH4-ITX: E |
IC FLASH 1G PARALLEL 63VFBGA
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Mikrontechnologie
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N25Q032A11ESE40G |
IC FLASH 32M SPI 108MHZ 8SO
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Mikrontechnologie
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MT29F4G08ABAEAWP-IT: E |
IC FLASH 4G PARALLEL 48TSOP
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Mikrontechnologie
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W25Q256FVEJF |
IC-Flash-Speicher 256 MB
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Winbond Elektronik
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USE Gefahrenabweichung |
IC DRAM 2G PARALLEL 96FBGA
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Mikrontechnologie
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MT41J256M16HA-125: E |
IC DRAM 4G PARALLEL 96FBGA
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Mikrontechnologie
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MT41K128M16JT-125: K |
IC DRAM 2G PARALLEL 96FBGA
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Mikrontechnologie
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USE Gefahrenabweichung |
IC DRAM 8G PARALLEL 96FBGA
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Mikrontechnologie
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USE Gefahrenabweichung |
IC DRAM 4G PARALLEL 78FBGA
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Mikrontechnologie
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TC58NVG0S3HTAI0 |
EEPROM 3,3 V, 1 Gbit CMOS und NAND EEPROM
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Toshiba
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