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SIR182DP-T1-RE3

fabricant:
Vishay Siliconix
Beschreibung:
MOSFET N-CH 60V 60A PPAK SO-8
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Kategorie:
Diskrete Halbleiterprodukte Transistoren FETs, MOSFETs Einzelne FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
3.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3250 pF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
69.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR182
Einleitung
N-Kanal 60 V 60 A (Tc) 69,4 W (Tc) Oberflächenbefestigung PowerPAK® SO-8
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