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Si1012CR-T1-GE3

fabricant:
Vishay Siliconix
Beschreibung:
MOSFET N-CH 20V SC75A
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
SC-75, SOT-416
Gate Charge (Qg) (Max) @ Vgs:
2 nC @ 8 V
Rds On (Max) @ Id, Vgs:
396mOhm @ 600mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
43 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-75A
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
630mA (Ta)
Power Dissipation (Max):
240mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1012
Einleitung
N-Kanal 20 V 630mA (Ta) 240mW (Ta) Oberflächenhalter SC-75A
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