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Gedächtnis
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
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IS43TR16640BL-107MBLI |
DRAM 1G, 1,35 V, DDR3L, 64Mx16, 1866MT/s @ 13-13-13, 96 Kugel BGA (9mm x13mm) RoHS, IT
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ISSI
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IS43TR16256A-125KBL |
DRAM 4G, 1,5 V, 1600 MHz DDR3 SDRAM
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ISSI
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IS43DR16128A-3DBLI |
DRAM 2G 1,8 V DDR2 128Mx16 333Mhz@CL5 84 BGA
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ISSI
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IS41C16105C-50KLI |
DRAM 16M, 5V, 50ns 1Mx16 Fast Page DRAM
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ISSI
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IS41LV16100C-50KLI |
DRAM 16M, 3.3V, 50ns 1Mx16 EDO DRAM Async
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ISSI
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Die in Anhang I der Verordnung (EU) Nr. 182/2011 aufgeführten Daten sind in Anhang II der Verordnung (EU) Nr. 182/2011 zu entnehmen. |
DRAM 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 Kugel BGA (9mm x13mm) RoHS, IT
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ISSI
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IS43TR16256A-15HBLI |
DRAM 4G, 1,5 V, 1333Mhz DDR3 SDRAM
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ISSI
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IS46TR16256AL-125KBLA2 |
DRAM 4G, 1,35 V, 1600 MT/s DDR3 SDRAM
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ISSI
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IS43TR16640B-125JBLI-TR |
DRAM 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 Kugel BGA (9mm x13mm) RoHS, IT, T&R
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ISSI
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IS46TR16256A-15HBLA2 |
DRAM 4G, 1,5 V, 1333MT/s DDR3 SDRAM
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ISSI
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IS43DR16128B-25EBL |
DRAM 2G, 1.8V, DDR2, 128Mx16, 400Mhz @ CL6, 84 Kugel BGA (10,5mmx13,5mm) RoHS
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ISSI
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IS43LR16320B-6BLI |
DRAM 512M, 1.8V, 166Mhz 32Mx16 DDR Mobile
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ISSI
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IS43TR16128BL-125KBLI |
DRAM 2G, 1,35 V, 1600MT/s 128Mx16 DDR3L SDRAM
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ISSI
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IS43TR16640A-15GBL |
DRAM 1G, 1,5 V, (64M x 16) 1300Mhz DDR3 SDRAM
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ISSI
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IS41LV16105C-50KLI |
DRAM 16M, 3.3V, 50ns 1Mx16 Schnellseiten-DRAM
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ISSI
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IS46TR16256A-15HBLA1 |
DRAM 4G, 1,5 V, 1333MT/s DDR3 SDRAM
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ISSI
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IS43TR16640A-15GBLI |
DRAM 1G, 1,5 V, (64M x 16) 1300Mhz DDR3 SDRAM
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ISSI
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AT25SF041-SSHD-T |
IC FLASH 4M SPI 104MHZ 8SOIC
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Adesto-Technologien
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MX25L12835FMI-10G |
IC FLASH 128M SPI 104MHZ 16SOP
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MXIC, Macronix.
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MX25R2035FZUIL0 |
IC FLASH 2M SPI 33MHZ 8USON
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MXIC, Macronix.
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MX30LF2G18AC-TI |
IC FLASH 2G PARALLEL 48TSOP
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MXIC, Macronix.
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M24C64-RMN6TP |
IC EEPROM 64K I2C 1MHZ 8SO
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STMikroelektronik
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MX30LF1G18AC-TI |
IC FLASH 1G PARALLEL 48TSOP
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MXIC, Macronix.
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MT41K512M8DA-107: P |
IC DRAM 4G PARALLEL 78FBGA
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Mikrontechnologie
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MX29LV160DBTI-70G |
IC FLASH 16M PARALLEL 48TSOP
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MXIC, Macronix.
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MT41K64M16TW-107: J |
IC DRAM 1G PARALLEL 96FBGA
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Mikrontechnologie
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M24C64-RDW6TP |
IC EEPROM 64K I2C 1MHZ
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STMikroelektronik
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MX68GL1G0GHT2I-10G |
IC FLASH 1GBIT
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MXIC, Macronix.
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Die in Absatz 1 genannte Angabe ist nicht anwendbar. |
EEPROM SEEPROM, 1K, SW - 1,7-3,6 V, 125 Kbps, Ind Tmp, 2-XSFN
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Atmel / Mikrochip-Technologie
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NT1B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B |
Handels-, Industrie- und Automobil-DDR3 ((L) 1 GB SDRAM
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Nanya-Technologie
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SST39VF040-70-4C-NHE |
Werbung des Flash-Speicher-4M (512Kx8) 70ns 2.7-3.6V
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Mikrochiptechnik
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S29GL064S70TFI010 |
Flash-Speicher-Ähnlichkeit 64Mb, 3.0V NOCH grelles
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Zypress Halbleiter
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