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Gedächtnis
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
|---|---|---|---|---|---|---|
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25AA02E48T-I/OT |
IC EEPROM 2K SPI 10MHZ SOT23-6
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Mikrochiptechnik
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M29W160ET70N6E |
IC FLASH 16M PARALLEL 48TSOP
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Mikrontechnologie
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W25Q80DVSSIG |
IC FLASH 8M SPI 104MHZ 8SOIC
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Winbond Elektronik
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W25Q16JVSSIQ |
IC FLASH 16M SPI 133MHZ 8SOIC
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Winbond Elektronik
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W25Q16FWSSIQ |
IC FLASH 16M SPI 104MHZ 8SOIC
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Winbond Elektronik
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IS61LV25616AL-10TI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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ISSI
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MT47H128M16RT-25E: C |
IC DRAM 2G PARALLEL 84FBGA
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Mikrontechnologie
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IS63LV1024L-12JL |
SRAM 1Mb 128Kx8 12ns 3.3v Async SRAM 3.3v
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ISSI
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IS62WV1288DBLL-45HLI |
SRAM 1Mb 45ns 128Kx8 Async SRAM
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ISSI
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JS28F320J3D75 |
IC FLASH 32M PARALLEL 56TSOP
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Mikrontechnologie
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PC28F256J3F95A |
IC Flash 256M Parallel 64EASYBGA
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Mikrontechnologie
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W9812G6KH-6 |
IC DRAM 128M PARALLEL 54TSOP
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Winbond Elektronik
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W25Q16JVSNIQ |
IC FLASH 16M SPI 133MHZ 8SOIC
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Winbond Elektronik
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W9812G6IH-6 |
IC DRAM 128M PARALLEL 54TSOP
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Winbond Elektronik
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W25Q128JVEIQ |
IC FLASH 128M SPI 133MHZ 8WSON
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Winbond Elektronik
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JS28F00AM29EWHA |
IC FLASH 1G PARALLEL 56TSOP
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Mikrontechnologie
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W25Q128FWPIG |
IC FLASH 128M SPI 104MHZ 8WSON
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Winbond Elektronik
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JS28F512P33EFA |
IC FLASH 512M PARALLEL 56TSOP
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Mikrontechnologie
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M25P16-VMN3TPB |
IC FLASH 16M SPI 75MHZ 8SO
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Mikrontechnologie
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W25Q16BVSFIG |
IC FLASH 16M SPI 104MHZ 16SOIC
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Winbond Elektronik
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MT29F8G08ADADAH4-IT: D |
IC FLASH 8G PARALLEL 63VFBGA
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Mikrontechnologie
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MT41J128M16HA-15E:D |
IC DRAM 2G PARALLEL 96FBGA
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Mikrontechnologie
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MT41J128M8JP-15E: G |
IC DRAM 1G PARALLEL 78FBGA
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Mikrontechnologie
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W9725G6KB-25 |
IC DRAM 256M PARALLEL 84WBGA
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Winbond Elektronik
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W25Q20EWSNIG |
IC FLASH 2M SPI 104MHZ 8SOIC
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Winbond Elektronik
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MT29F8G08ABABAWP: B |
IC FLASH 8G PARALLEL 48TSOP I
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Mikrontechnologie
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W9751G8KB-25 |
IC DRAM 512M PARALLEL 60WBGA
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Winbond Elektronik
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W631GU6MB12I |
IC SDRAM 1GBIT 800MHZ 96BGA
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Winbond Elektronik
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W25Q16FWZPIQ |
IC FLASH 16M SPI 104MHZ 8WSON
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Winbond Elektronik
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W25Q64FWSSIQ |
IC FLASH 64M SPI 104MHZ 8SOIC
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Winbond Elektronik
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Die in Absatz 1 Buchstabe b genannten Anforderungen gelten für die in Absatz 1 Buchstabe b genannten Fahrzeuge. |
IC Flash 256M Parallel 64EASYBGA
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Mikrontechnologie
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W25Q256JVFIQ |
IC FLASH 256M SPI 133MHZ 16SOIC
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Winbond Elektronik
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MT28EW128ABA1LPC-0SIT |
IC FLASH 128M PARALLEL 64LBGA
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Mikrontechnologie
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MT29F4G08ABADAWP-IT: D |
IC FLASH 4G PARALLEL 48TSOP I
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Mikrontechnologie
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MT28EW128ABA1LJS-0SIT |
IC FLASH 128M PARALLEL 56TSOP
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Mikrontechnologie
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M25P32-VME6G |
IC FLASH 32M SPI 75MHZ 8VDFPN
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Mikrontechnologie
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Einheit für die Überwachung der Sicherheit der Luftfahrt |
IC FLASH 128M PARALLEL 56TSOP
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Mikrontechnologie
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PC28F256P30TFE |
IC Flash 256M Parallel 64EASYBGA
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Mikrontechnologie
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JS28F640J3D75 |
IC FLASH 64M PARALLEL 56TSOP
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Mikrontechnologie
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MT48LC16M16A2P-7E: D |
IC DRAM 256M PARALLEL 54TSOP
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Mikrontechnologie
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JS28F256P30TFA |
IC FLASH 256M PARALLEL 56TSOP
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Mikrontechnologie
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MT48LC4M16A2P-75: G |
IC DRAM 64M PARALLEL 54TSOP
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Mikrontechnologie
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PC28F256P30TFA |
IC Flash 256M Parallel 64EASYBGA
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Mikrontechnologie
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JS28F512M29EWHA |
IC FLASH 512M PARALLEL 56TSOP
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Mikrontechnologie
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JS28F512P30EFA |
IC FLASH 512M PARALLEL 56TSOP
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Mikrontechnologie
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JS28F256P33BFE |
IC FLASH 256M PARALLEL 56TSOP
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Mikrontechnologie
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MT41K256M16TW-107: P |
IC DRAM 4G PARALLEL 96FBGA
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Mikrontechnologie
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CY62167EV30LL-45BVXIT |
SRAM 16Mb 3V 45ns 1M x 16 LP SRAM
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Zypress Halbleiter
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W9751G6KB-25 |
IC DRAM 512M PARALLEL 84WBGA
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Winbond Elektronik
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W25Q32JVSSIQ |
IC FLASH 32M SPI 133MHZ 8SOIC
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Winbond Elektronik
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