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IXFH60N65X2

fabricant:
IXYS
Beschreibung:
MOSFET N-CH 650V 60A TO247
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
107 nC @ 10 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6180 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
780W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH60
Einleitung
N-Kanal 650 V 60A (Tc) 780W (Tc) durch Loch TO-247 (IXTH)
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