Nachricht senden

IXTQ130N10T

fabricant:
IXYS
Beschreibung:
MOSFET N-CH 100V 130A TO3P
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
104 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Paket:
Schlauch
Drain to Source Voltage (Vdss):
100 V
Vgs (maximal):
± 20V
Product Status:
Active
Eintrittskapazität (Ciss) (Max) @ Vds:
5080 pF @ 25 V
Mounting Type:
Through Hole
Reihe:
Graben
Supplier Device Package:
TO-3P
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Power Dissipation (Max):
360W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTQ130
Einleitung
N-Kanal 100 V 130 A (Tc) 360 W (Tc) durch Loch TO-3P
Senden Sie RFQ
Auf Lager:
MOQ: