DMP2021UFDE-7
fabricant:
Dioden eingebunden
Beschreibung:
MOSFET P-CH 20V 11.1A 6UDFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Kategorie:
Diskrete Halbleiterprodukte
Transistoren
FETs, MOSFETs
Einzelne FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUDFN
Gate Charge (Qg) (Max) @ Vgs:
59 nC @ 8 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2760 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type E)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
11.1A (Ta)
Power Dissipation (Max):
1.9W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMP2021
Einleitung
P-Kanal 20 V 11.1A (Ta) 1.9W (Ta) Oberflächenhalter U-DFN2020-6 (Typ E)
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| Bild | Teil # | Beschreibung | |
|---|---|---|---|
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|
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|
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DMTH6016LPSQ-13 |
MOSFET N-CHA 60V 10.6A POWERDI
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ZXMN6A07FTA |
MOSFET N-CH 60V 1.2A SOT23-3
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ZXMP6A17GTA |
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ZXMP6A17E6TA |
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DMP3010LK3-13 |
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DMP2165UW-7 |
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