ZXMN6A07FTA
fabricant:
Dioden eingebunden
Beschreibung:
MOSFET N-CH 60V 1.2A SOT23-3
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Schnittstellen (Qg) (Max) @ Vgs:
3.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
250mOhm @ 1.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
166 pF @ 40 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Power Dissipation (Max):
625mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ZXMN6
Einleitung
N-Kanal 60 V 1.2A (Ta) 625mW (Ta) Oberflächenbefestigung SOT-23-3
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| Bild | Teil # | Beschreibung | |
|---|---|---|---|
|
|
DMTH43M8LFGQ-13 |
MOSFET N-CH 40V PWRDI3333
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|
|
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MOSFET P-CH 60V 900MA SOT23-3
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DMG301NU-7 |
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|
DMTH6016LPSQ-13 |
MOSFET N-CHA 60V 10.6A POWERDI
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ZXMP6A17GTA |
MOSFET P-CH 60V 3A SOT223
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ZXMP6A17E6TA |
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DMP3010LK3-13 |
MOSFET P-CH 30V 17A TO252-3
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DMP2165UW-7 |
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DMTH8003SPS-13 |
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