DMTH8003SPS-13
fabricant:
Dioden eingebunden
Beschreibung:
MOSFET N-CH 80V 100A PWRDI5060-8
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
124.3 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8952 pF @ 40 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI5060-8 (Type K)
Mfr:
Dioden eingebunden
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Verlustleistung (maximal):
2.9W
Technology:
MOSFET (Metal Oxide)
Basisproduktnummer:
DMTH8003
Einleitung
N-Kanal 80 V 100 A (Tc) 2,9 W Oberflächenbefestigung PowerDI5060-8 (Typ K)
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| Bild | Teil # | Beschreibung | |
|---|---|---|---|
|
|
DMTH43M8LFGQ-13 |
MOSFET N-CH 40V PWRDI3333
|
|
|
|
DMP4015SPSQ-13 |
MOSFET P-CH 40V 8.5A PWRDI5060-8
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|
|
|
ZXMP6A13FTA |
MOSFET P-CH 60V 900MA SOT23-3
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DMG301NU-7 |
MOSFET N-CH 25V 260MA SOT23
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|
|
|
DMTH6016LPSQ-13 |
MOSFET N-CHA 60V 10.6A POWERDI
|
|
|
|
ZXMN6A07FTA |
MOSFET N-CH 60V 1.2A SOT23-3
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|
ZXMP6A17GTA |
MOSFET P-CH 60V 3A SOT223
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|
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|
ZXMP6A17E6TA |
MOSFET P-CH 60V 2.3A SOT26
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DMP3010LK3-13 |
MOSFET P-CH 30V 17A TO252-3
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DMP2165UW-7 |
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