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IXTA36N30P

fabricant:
IXYS
Beschreibung:
MOSFET N-CH 300V 36A TO263
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
110mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2250 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PolarHT™
Supplier Device Package:
TO-263AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA36
Einleitung
N-Kanal 300 V 36A (Tc) 300W (Tc) Oberflächenhalter TO-263AA
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