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DMN30H4D0LFDE-7

fabricant:
Dioden eingebunden
Beschreibung:
MOSFET N-CH 300V 550MA 6UDFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
6-PowerUDFN
Schnittstellen (Qg) (Max) @ Vgs:
7.6 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4Ohm @ 300mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
187.3 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type E)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
550mA (Ta)
Power Dissipation (Max):
630mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN30
Einleitung
N-Kanal 300 V 550 mA (Ta) 630 mW (Ta) Oberflächenhalter U-DFN2020-6 (Typ E)
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