IS42S32160F-6BLI
fabricant:
ISSI, Integrierte Siliziumlösungen Inc.
Beschreibung:
IC DRAM 512MBIT PAR 90TFBGA
Kategorie:
Halbleiter
Spezifikationen
Category:
Integrated Circuits (ICs)
Memory
Memory
Memory Size:
512Mbit
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
-
Supplier Device Package:
90-TFBGA (8x13)
Memory Type:
Volatile
Mfr:
ISSI, Integrierte Siliziumlösungen Inc.
Clock Frequency:
167 MHz
Spannung - Versorgung:
3V bis 3,6V
Access Time:
5.4 ns
Packung / Gehäuse:
90-TFBGA
Memory Organization:
16M x 32
Betriebstemperatur:
-40 °C bis 85 °C (TA)
Technology:
SDRAM
Base Product Number:
IS42S32160
Memory Format:
DRAM
Einleitung
SDRAM-Speicher IC 512 Mbit Parallel 167 MHz 5,4 ns 90-TFBGA (8x13)
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