IS64WV25616BLL-10CTLA3
fabricant:
ISSI, Integrierte Siliziumlösungen Inc.
Beschreibung:
IC SRAM 4MBIT PARALLEL 44TSOP II
Kategorie:
Halbleiter
Spezifikationen
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
10ns
Supplier Device Package:
44-TSOP II
Memory Type:
Volatile
Mfr:
ISSI, Integrated Silicon Solution Inc
Memory Size:
4Mbit
Voltage - Supply:
2.4V ~ 3.6V
Access Time:
10 ns
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Memory Organization:
256K x 16
Operating Temperature:
-40°C ~ 125°C (TA)
Technologie:
SRAM - Asynchron
Base Product Number:
IS64WV25616
Speicherformat:
SRAM
Einleitung
SRAM - Asynchrone Speicher-IC 4Mbit Parallel 10 ns 44-TSOP II
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| Bild | Teil # | Beschreibung | |
|---|---|---|---|
|
|
IS61NLP102436B-200B3LI |
IC SRAM 36MBIT PARALLEL 165TFBGA
|
|
|
|
IS45S16320F-6TLA1 |
IC DRAM 512MBIT PAR 54TSOP II
|
|
|
|
IS42S86400D-7TL |
IC DRAM 512MBIT PAR 54TSOP II
|
|
|
|
IS61WV102416EDBLL-10T2LI |
IC SRAM 16MBIT PARALLEL 48TSOP I
|
|
|
|
IS46DR16640B-25DBLA2 |
IC DRAM 1GBIT PARALLEL 84TWBGA
|
|
|
|
IS46QR16256B-083RBLA2 |
IC DDR4 256 MB 96-FBGA
|
|
|
|
IS61WV102416FBLL-10TLI |
IC SRAM 16MBIT PARALLEL 48TSOP I
|
|
|
|
IS46TR16256BL-125KBLA2 |
IC DRAM 4GBIT PARALLEL 96TWBGA
|
|
|
|
IS64WV102416BLL-10MLA3 |
IC SRAM 16MBIT PAR 48MINIBGA
|
|
|
|
IS61WV51216EDBLL-10TLI-TR |
IC SRAM 8MBIT PARALLEL 44TSOP II
|
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