IS42S32160D-7BLI
fabricant:
ISSI, Integrierte Siliziumlösungen Inc.
Beschreibung:
IC DRAM 512MBIT PAR 90TFBGA
Kategorie:
Halbleiter
Spezifikationen
Category:
Integrated Circuits (ICs)
Memory
Memory
Memory Size:
512Mbit
Product Status:
Not For New Designs
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
-
Supplier Device Package:
90-TFBGA (8x13)
Memory Type:
Volatile
Mfr:
ISSI, Integrated Silicon Solution Inc
Clock Frequency:
143 MHz
Voltage - Supply:
3V ~ 3.6V
Zugriffszeit:
5,4 ns
Package / Case:
90-TFBGA
Gedächtnisorganisation:
16M x 32
Betriebstemperatur:
-40 °C bis 85 °C (TA)
Technology:
SDRAM
Basisproduktnummer:
IS42S32160
Memory Format:
DRAM
Einleitung
SDRAM-Speicher IC 512 Mbit Parallel 143 MHz 5,4 ns 90-TFBGA (8x13)
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| Bild | Teil # | Beschreibung | |
|---|---|---|---|
|
|
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|
|
|
|
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|
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IS46QR16256B-083RBLA2 |
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|
IS64WV102416BLL-10MLA3 |
IC SRAM 16MBIT PAR 48MINIBGA
|
|
|
|
IS61WV51216EDBLL-10TLI-TR |
IC SRAM 8MBIT PARALLEL 44TSOP II
|
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