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IXFA90N20X3

fabricant:
IXYS
Beschreibung:
MOSFET N-CH 200V 90A TO263AA
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
Rds On (Max) @ Id, Vgs:
12.8mOhm @ 45A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5420 pF @ 25 V
Mounting Type:
Surface Mount
Reihe:
HiPerFETTM, Ultra X3
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Verlustleistung (maximal):
390W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproduktnummer:
IXFA90
Einleitung
N-Kanal 200 V 90A (Tc) 390W (Tc) Oberflächenhalter TO-263AA (IXFA)
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