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IXTH12N150

fabricant:
IXYS
Beschreibung:
MOSFET N-CH 1500V 12A TO247
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
106 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 6A, 10V
FET-Typ:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
10V
Paket:
Schlauch
Drain to Source Voltage (Vdss):
1500 V
Vgs (maximal):
±30V
Product Status:
Active
Eintrittskapazität (Ciss) (Max) @ Vds:
3720 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH12
Einleitung
N-Kanal 1500 V 12A (Tc) 890W (Tc) durch Loch TO-247 (IXTH)
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