Vishay Halbleiter
- Einleitung
- Neueste Produkte
Einleitung
Vishay Halbleiter
Neueste Produkte
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
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SI2312BDS-T1-E3 |
MOSFET N-Kanal 20V 3,9A
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Si1022R-T1-GE3 |
MOSFET 60V 330mA 250mW 1,25ohm @ 10V
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SUM110P08-11L-E3 |
MOSFET 80V 110A 375W
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Siehe Anhang I Abschnitt 2 der Verordnung (EG) Nr. 443/2009. |
MOSFET 600V 39mOhm@10V 73A N-Ch E-SRS
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SI4559ADY-T1-GE3 |
MOSFET N/P-Ch MOSFET 60V 58/120mohm @ 10V
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IRFPS37N50APBF |
MOSFET N-Chan 500V 36 Ampere
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SI4946BEY-T1-E3 |
MOSFET 60V 6,5A 3,7W
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SIR462DP-T1-GE3 |
MOSFET 30V 30A 41,7W 7,9mAh @ 10V
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SI4435DDY-T1-GE3 |
MOSFET 30V 11,4A 5,0W 24mAh @ 10V
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Die in Absatz 1 genannten Anforderungen gelten nicht für die Produktion von Kraftfahrzeugen. |
MOSFET 12V 5.3A 1.25W 32 Mohms @ 4.5V
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SQM40031EL_GE3 |
MOSFET P Ch -40V Vds AEC-Q101 qualifizierte
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SQ1440EH-T1_GE3 |
MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualifiziert
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SI2312CDS-T1-GE3 |
MOSFET 20V 6A N-CH MOSFET
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SI7938DP-T1-GE3 |
MOSFET 40V 60A 46W 5,8mAh @ 10V
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SI7252DP-T1-GE3 |
MOSFET 100V 17mOhm@10V 36,7A N-Ch MV T-FET
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SI1539CDL-T1-GE3 |
MOSFET 30 Volt 0,7 Ampere 0,34 Watt
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SI3932DV-T1-GE3 |
MOSFET 30V 3,7A Doppel-N-CH-MOSFET
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SI2303CDS-T1-GE3 |
MOSFET 30V 2,7A 2,3W 190 Mohms @ 10V
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SI4488DY-T1-E3 |
MOSFET 150V 5A 3,1 W
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SI5515CDC-T1-GE3 |
MOSFET 20V 4A / 4A N & P-CH MOSFET
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SI7119DN-T1-E3 |
MOSFET 200V 3,8A 52W 1,05 Ohm @ 10V
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SI4848DY-T1-GE3 |
MOSFET 150V 3,7A 3,0W 85mAh @ 10V
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SI4134DY-T1-GE3 |
MOSFET 30V 14A 5,0W
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SI7336ADP-T1-E3 |
MOSFET 30V 30A 5,4W 3,0mohm @ 10V
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SI1902DL-T1-E3 |
MOSFET 20V 0,70A
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IRFP460APBF |
MOSFET N-Chan 500V 20 Ampere
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IRF540PBF |
MOSFET N-Chan 100V 28 Ampere
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SI7615ADN-T1-GE3 |
MOSFET -20V 4.4mOhm@10V 35A P-Ch G-III
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SI7315DN-T1-GE3 |
MOSFET -150V.315ohm@-10V -8.9A P-Ch T-FET
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SI7145DP-T1-GE3 |
MOSFET -30V 2,6mOhm@10V 60A P-Ch G-III
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