Halbleiter von Samsung
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
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K9F4G08U0B-PCB0 |
512M x 8 Bits / 1G x 8 Bits NAND Flash Speicher
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K4S641632K-UC60 |
64 MB K-Die SDRAM
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K9F2G08U0D-SCB0 |
256 M x 8 Bit NAND-Flashspeicher
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K9K8G08U0A-PIB0 |
1G x 8 Bit / 2G x 8 Bit NAND-Flashspeicher
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Die Kommission wird die folgenden Maßnahmen ergreifen: |
Speicher-IC
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K4B2G1646F-BCK0 |
96FBGA ohne Blei und ohne Halogen
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K4H511638J-LCCC |
512 Mb C-Die DDR SDRAM Spezifikation
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K9F1G08U0E-SCB0 |
1 GB E-Die NAND-Flash
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K4W1G1646E-HC12 |
Grafisches Gedächtnis
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K4T1G084QF-BCF7 |
1 GB F-die DDR2 SDRAM
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K4B4G1646D-BCMA |
4Gb B-Würfel DDR3 SDRAM Olny x16
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K9F5608U0D-PCB |
32 M x 8 Bit NAND-Flashspeicher
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K4A8G085WB-BCPB |
8 GB B-DIE DDR4 SDRAM
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K4A8G165WC-BCTD |
8 GB B-DIE DDR4 SDRAM x16
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K4B4G0846Q-HYK0 |
DDP 4Gb B-die DDR3 SDRAM Spezifikation
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K4T1G164QE-HCE7 |
1 GB E-die DDR2 SDRAM 60FBGA/84FBGA mit bleifreiem und halogenfreiem (RoHS-konform)
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K9GAG08U0E-SCB0 |
16 GB E-Die NAND-Flash
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K4G20325FD-FC03 |
Grafisches Gedächtnis
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K4G41325FE-HC28 |
Grafisches Gedächtnis
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K4E6E304EE-EGCF |
Speicher-IC
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K4B1G1646G-BCH9 |
Spezifikation für 1 GB D-Die DDR3 SDRAM
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K4G80325FB-HC25 |
Grafisches Gedächtnis
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K4S561632H-UC75 |
SDRAM-Produktführer
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K4S511632D-UC75 |
DDP 512Mbit SDRAM 8M x 16bit x 4 Banken Synchronen DRAM LVTTL
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K4T1G164QE-HCF8 |
1 GB E-Die DDR2 SDRAM
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K9F1G08U0B-PCB0 |
128M x 8 Bit / 256M x 8 Bit NAND-Flashspeicher
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K9F5608U0D-PIB0 |
32 M x 8 Bit NAND-Flashspeicher
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K4S561632N-LC75 |
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K9F1G08U0D-SCB0 |
128M x 8 Bit / 256M x 8 Bit NAND-Flashspeicher
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K9WBG08U1M-PIB0 |
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K9WAG08U1A-PIB0 |
1G x 8 Bit / 2G x 8 Bit NAND-Flashspeicher
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K9F2G08U0C-SIB0 |
2 GB C-Die NAND Flash
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K9F2G08U0C-SCB0 |
2 GB C-Die NAND Flash
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S3C4530A01-QE80 |
Ein 16/32-Bit-RISC-Mikrocontroller ist ein kostengünstiger, leistungsstarker Mikrocontroller
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S3C2440AL-40 |
16/32-Bit-RISC-Mikroprozessor
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K5L2731CAA-D770 |
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K4S641632N-LC60 |
1M x 16Bit x 4 Banken Synchrone DRAM
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K4E6E304EE-EGCE |
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K4B4G1646D-BMK0 |
DDR3-SDRAM-Speicher
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S3C2410AL-20 |
Risc-Mikroprozessor
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KMR310001M-B611 |
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K4S561632E-UC75 |
256 Mb E-die SDRAM Spezifikation 54 TSOP-II mit Pb-frei (RoHS-konform)
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K9K8G08U0B-PCB0 |
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K4G41325FC-HC03 |
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K4T1G164QF-BCE7 |
1 GB F-die DDR2 SDRAM
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K4T51163QI-HCE7 |
512 Mb B-DIE DDR2 SDRAM
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K4B4G1646B-HYK0 |
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K4B1G1646G-BCK0 |
Spezifikation für die 1Gb C-die DDR3 SDRAM
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K4S561632J-UC75 |
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K9F1G08U0D-SIB0 |
1 GB NAND-Flash
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