FQA19N60
fabricant:
Einheitlich
Beschreibung:
POWER FIELD-EFFECT TRANSISTOR, 1
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Produktstatus:
Aktiv
Mounting Type:
Through Hole
Paket:
Schüttgut
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 25 V
Reihe:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-3PN
Rds On (Max) @ Id, Vgs:
380mOhm @ 9.3A, 10V
Mfr:
onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
300W (Tc)
Package / Case:
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
18.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Einleitung
N-Kanal 600 V 18,5 A (Tc) 300 W (Tc) durch das Loch TO-3PN
Senden Sie RFQ
Auf Lager:
MOQ: