FDPF12N50UT
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
800mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Obsolete
Eintrittskapazität (Ciss) (Max) @ Vds:
1395 pF @ 25 V
Mounting Type:
Through Hole
Reihe:
FRFET®
Supplier Device Package:
TO-220F-3
Mfr:
Einheitlich
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Verlustleistung (maximal):
42W (TC)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDPF12
Einleitung
N-Kanal 500 V 10A (Tc) 42W (Tc) durch das Loch TO-220F-3
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