FQP19N20C
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 200V 19A TO220-3
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
53 nC @ 10 V
Rds On (Max) @ Id, Vgs:
170mOhm @ 9.5A, 10V
FET Type:
N-Channel
Antriebsspannung (maximal eingeschaltet, minimale eingeschaltet):
10 V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (maximal):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1080 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Power Dissipation (Max):
139W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP19
Einleitung
N-Kanal 200 V 19A (Tc) 139W (Tc) durch Loch TO-220-3
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