IRFB38N20DPBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 200V 43A TO220AB
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Packung / Gehäuse:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
Rds On (Max) @ Id, Vgs:
54mOhm @ 26A, 10V
FET Type:
N-Channel
Antriebsspannung (maximal eingeschaltet, minimale eingeschaltet):
10 V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Power Dissipation (Max):
3.8W (Ta), 300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB38
Einleitung
N-Kanal 200 V 43 A (Tc) 3,8 W (Ta), 300 W (Tc) durch Loch TO-220 AB
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