FDMS0312S
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 30V 19A/42A 8PQFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Paket:
Band und Rolle (TR)
Schnittband (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (maximal):
± 20V
Product Status:
Active
Eintrittskapazität (Ciss) (Max) @ Vds:
2820 pF @ 15 V
Mounting Type:
Surface Mount
Reihe:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 42A (Tc)
Power Dissipation (Max):
2.5W (Ta), 46W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS0312
Einleitung
N-Kanal 30 V 19A (Ta), 42A (Tc) 2,5W (Ta), 46W (Tc) Oberflächenbefestigung 8-PQFN (5x6)
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