FQA8N100C
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 1000V 8A TO3PN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Schnittstellen (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.45Ohm @ 4A, 10V
FET-Typ:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA8
Einleitung
N-Kanal 1000 V 8A (Tc) 225W (Tc) durch das Loch TO-3PN
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