IRFB4332PBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 250V 60A TO220AB
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5860 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Verlustleistung (maximal):
390W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproduktnummer:
IRFB4332
Einleitung
N-Kanal 250 V 60A (Tc) 390W (Tc) durch das Loch TO-220AB
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