FCB20N60TM
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 600V 20A D2PAK
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
3080 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperFET™
Supplier Device Package:
D²PAK (TO-263)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Basisproduktnummer:
FCB20N60
Einleitung
N-Kanal 600 V 20A (Tc) 208W (Tc) Oberflächenhalter D2PAK (TO-263)
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