IRFP4368PBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 75V 195A TO247AC
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Kategorie:
Diskrete Halbleiterprodukte
Transistoren
FETs, MOSFETs
Einzelne FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Packung / Gehäuse:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
570 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.85mOhm @ 195A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
19230 pF @ 50 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-247AC
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Power Dissipation (Max):
520W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFP4368
Einleitung
N-Kanal 75 V 195 A (Tc) 520 W (Tc) durch Loch TO-247AC
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