FDMS86550
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Packung / Gehäuse:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
154 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.65mOhm @ 32A, 10V
FET Type:
N-Channel
Antriebsspannung (maximal eingeschaltet, minimale eingeschaltet):
8V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Abflussspannung zur Quelle (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
11530 pF @ 30 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 155A (Tc)
Power Dissipation (Max):
2.7W (Ta), 156W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
Einleitung
N-Kanal 60 V 32A (Ta), 155A (Tc) 2,7W (Ta), 156W (Tc) Oberflächenbefestigung 8-PQFN (5x6)
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