FDMS86181
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 100V 44A/124A 8PQFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
59 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 44A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Paket:
Band und Rolle (TR)
Schnittband (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (maximal):
± 20V
Product Status:
Active
Eintrittskapazität (Ciss) (Max) @ Vds:
4125 pF @ 50 V
Mounting Type:
Surface Mount
Reihe:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
44A (Ta), 124A (Tc)
Power Dissipation (Max):
2.5W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
Einleitung
N-Kanal 100 V 44A (Ta), 124A (Tc) 2,5W (Ta), 125W (Tc) Oberflächenbefestigung 8-PQFN (5x6)
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