FDMS86300
fabricant:
Einheitlich
Beschreibung:
MOSFET N-CH 80V 19A/80A 8PQFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Fet-Eigenschaft:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Betriebstemperatur:
-55 °C bis 150 °C (TJ)
Package / Case:
8-PowerTDFN
Schnittstellen (Qg) (Max) @ Vgs:
86 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 19A, 10V
FET-Typ:
N-Kanal
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7082 pF @ 40 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 80A (Tc)
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
Einleitung
N-Kanal 80 V 19A (Ta), 80A (Tc) 2,5W (Ta), 104W (Tc) Oberflächenanbau 8-PQFN (5x6)
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