IRFB4115PBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 150V 104A TO220AB
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
11mOhm @ 62A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Produktstatus:
Aktiv
Input Capacitance (Ciss) (Max) @ Vds:
5270 pF @ 50 V
Typ der Montage:
Durchs Loch
Series:
HEXFET®
Lieferanten-Gerätepaket:
TO-220AB
Mfr:
Infineon Technologies
Strom - kontinuierlicher Abfluss (Id) @ 25°C:
104A (Tc)
Power Dissipation (Max):
380W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB4115
Einleitung
N-Kanal 150 V 104A (Tc) 380W (Tc) durch Loch TO-220AB
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