IRFB4227PBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 200V 65A TO220AB
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 46A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4600 pF @ 25 V
Typ der Montage:
Durchs Loch
Series:
HEXFET®
Lieferanten-Gerätepaket:
TO-220AB
Mfr:
Infineon Technologies
Strom - kontinuierlicher Abfluss (Id) @ 25°C:
65A (Tc)
Power Dissipation (Max):
330W (Tc)
Technologie:
MOSFET (Metalloxid)
Base Product Number:
IRFB4227
Einleitung
N-Kanal 200 V 65A (Tc) 330W (Tc) durch Loch TO-220AB
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