IRFB4410ZPBF
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V 97A TO220AB
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Kategorie:
Diskrete Halbleiterprodukte
Transistoren
FETs, MOSFETs
Einzelne FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9mOhm @ 58A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4820 pF @ 50 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
97A (Tc)
Power Dissipation (Max):
230W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB4410
Einleitung
N-Kanal 100 V 97A (Tc) 230W (Tc) durch Loch TO-220AB
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