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GD25S512MDYIGR

fabricant:
GigaDevice Semiconductor (HK) Limited
Beschreibung:
IC FLASH 512MBIT SPI/QUAD 8WSON
Kategorie:
Halbleiter
Spezifikationen
Category:
Integrated Circuits (ICs) Memory Memory
Speichergröße:
512 Mbit
Product Status:
Active
Typ der Montage:
Oberflächenbefestigung
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Reihe:
-
DigiKey Programmable:
Not Verified
Speicheroberfläche:
SPI - Quad I/O
Write Cycle Time - Word, Page:
50µs, 2.4ms
Supplier Device Package:
8-WSON (6x8)
Memory Type:
Non-Volatile
Mfr:
GigaDevice Semiconductor (HK) Limited
Clock Frequency:
104 MHz
Voltage - Supply:
2.7V ~ 3.6V
Package / Case:
8-WDFN Exposed Pad
Memory Organization:
64M x 8
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
FLASH - NOR
Base Product Number:
GD25S512
Memory Format:
FLASH
Einleitung
FLASH - NOR Speicher IC 512Mbit SPI - Quad I/O 104 MHz 8-WSON (6x8)
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