Die in Absatz 1 genannte Regelung gilt nicht für
fabricant:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 2,7A SOT23
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 25µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
2.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
92mOhm @ 2.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
290 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
Micro3™/SOT-23
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLML0060
Einleitung
N-Kanal 60 V 2.7A (Ta) 1.25W (Ta) Oberflächenbefestigung Micro3TM/SOT-23
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