FDMS86263P
fabricant:
Einheitlich
Beschreibung:
MOSFET P-CH 150V 4.4A/22A 8PQFN
Kategorie:
Getrennte Halbleiter-Produkte
Spezifikationen
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Schnittstellen (Qg) (Max) @ Vgs:
63 nC @ 10 V
Rds On (Max) @ Id, Vgs:
53mOhm @ 4.4A, 10V
FET-Typ:
P-Kanal
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Paket:
Band und Rolle (TR)
Schnittband (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
150 V
Vgs (maximal):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3905 pF @ 75 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta), 22A (Tc)
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86263
Einleitung
P-Kanal 150 V 4.4A (Ta), 22A (Tc) 2.5W (Ta), 104W (Tc) Oberflächenanbau 8-PQFN (5x6)
Senden Sie RFQ
Auf Lager:
MOQ: